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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. A G L KTC3876S EPITAXIAL PLANAR NPN TRANSISTOR E B L Complementary to KTA1505S. 2 3 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 35 30 5 500 50 150 150 -55 150 UNIT V V V mA mA mW C N P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 H M 1. EMITTER 2. BASE 3. COLLECTOR K SOT-23 Marking h FE Rank Lot No. Type Name W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance (Note) : hFE(1) Classification hFE(2) Classification O:70 140 O:25Min. SYMBOL ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Y:120 240 Y:40Min. TEST CONDITION VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=6V, IC=400mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=6V, IC=20mA VCB=6V, IE=0, f=1MHz GR:200 400 MIN. 70 25 TYP. 0.1 0.8 300 7.0 MAX. 0.1 0.1 400 0.25 1.0 V V MHz pF UNIT A A 2001. 2. 24 Revision No : 2 J D 1/1 |
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